View STTH806CT_468114.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

(R)
STTH806CT
TURBO 2 ULTRA-FAST HIGH VOLTAGE RECTIFIER
PRELIMINARY DATASHEET
MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 2x4 A 600 V 175 C 1.8 V 45 ns
FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND VOLTAGE PERFORMANCE. ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY FOR LOW SIDE EFFECTS. LOW INDUCTANCE, ALLOWS SIMPLIFIED LAYOUT. TO-220AB
A2 A1 K
ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Tc = 138C = 0.5 Per diode Per device tp = 10 ms sinusoidal Value 600 20 4 8 35 -65 +175 + 175 Unit V A A A C C
Surge non repetitive forward current Storage temperature range Maximum operating junction temperature
July 1999 - Ed: 3A
1/5
STTH806CT
THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case thermal resistance Per diode Total Value 3.9 2.45 Unit C/W
STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Tests Conditions VR = 600 V Tj = 25C Tj = 125C VF ** Forward voltage drop IF = 4 A Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation : P = 1.25 x IF(AV) + 0.135 IF(RMS)2 1.4 3 Min. Typ. Max. 30 120 2.3 1.8 V Unit A
DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr IF = 0.5 A IF = 1 A IRM Sfactor tfr VFP Qrr IF = 4 A dIF/dt = 40 A/s VFR = 1.1 x VF max VR = 400V IF = 4 A dIF/dt = -200 A/s Tj = 25C Tests Conditions Irr = 0.25 A dIF/dt = - 50 A/s IR = 1 A VR = 30 V Tj = 125C 1.5 200 6 Tj = 125C 175 Tj = 25C Min. Typ. Max. 30 45 6.5 A ns V nC Unit ns
VR = 400 V IF = 4 A dIF/dt = -200 A/s
2/5
STTH806CT
Fig. 1: Conduction losses versus average current (per diode). Fig. 2: Forward voltage drop versus forward current (per diode).
PF(av)(W) 10 9 = 0.05 8 7 6 5 4 3 2 1 0 0.0 0.5 1.0 1.5
IFM(A)
= 0.1 = 0.2 = 0.5
50.0
Tj=125C Maximum values
=1
10.0
Tj=125C Typical values Tj=25C Maximum values
1.0
T
IF(av) (A) 2.0 2.5 3.0 3.5
=tp/T
tp
4.0
4.5
5.0
VFM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.
Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode).
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 0.0 1E-3
= 0.5
IRM(A) 14 12 10 8
IF=0.5 x IF(av) VR=400V Tj=125C IF=2 x IF(av)
IF=IF(av)
= 0.2 = 0.1
6
T
4
tp
Single pulse
tp(s) 1E-2 1E-1
=tp/T
2
1E+0
dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500
0
Fig. 5: Reverse recovery time versus (90% confidence, per diode).
dIF/dt
Fig. 6: Reverse charges versus dIF/dt (90% confidence, per diode).
trr(ns) 200 180 160 140 120 100 80 60 40 20 0
Qrr(nC) 500
VR=400V Tj=125C
VR=400V Tj=125C
400
IF=2 x IF(av)
IF=2 x IF(av)
IF=IF(av) IF=0.5 x IF(av)
300 200 100
IF=IF(av)
IF=0.5 x IF(av)
dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500
3/5
STTH806CT
Fig. 7: Softness factor (tb/ta) versus dIF/dt (typical values, per diode). Fig. 8: Relative variation of dynamic parameters versus junction temperature (Reference: Tj=125C).
S factor 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
3.5
IF< 2 x IF(av) VR=400V Tj=125C
3.0 2.5 2.0 1.5 1.0
IRM S factor
dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500
0.5
QRR
Tj(C) 100 125 150
0.0 25
50
75
Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence, per diode).
Fig. 10: Forward recovery time versus dIF/dt (90% confidence, per diode).
VFP(V) 20 18 16 14 12 10 8 6 4 2 0
IF=IF(av) Tj=125C
tfr(ns) 200 180 160 140 120 100 80 60 40 20 0
VFR=1.1 x VF max. IF=IF(av) Tj=125C
dIF/dt(A/s) 0 50 100 150 200 250 300
dIF/dt(A/s) 0 50 100 150 200 250 300
4/5
STTH806CT
PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A
H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A
Millimeters Min. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 13 2.65 15.25 6.20 3.50 3.75 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 14 2.95 15.75 6.60 3.93 3.85
Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.511 0.104 0.600 0.244 0.137 0.147 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 0.551 0.116 0.620 0.259 0.154 0.151
C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam.
16.4 typ.
0.645 typ.
2.6 typ.
0.102 typ.
Ordering code STTH806CT
Marking STTH806CT
Package TO-220AB
Weight 2.2 g.
Base qty 50
Delivery mode Tube
Cooling method: C Recommended torque value: 0.8 N.m. Maximum torque value: 1 N.m. Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 5/5

▲Up To Search▲

Price & Availability of STTH806CT

	To Download STTH806CT Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .